Transistor performance of high-T/sub c/ three terminal devices based on carrier concentration modulation
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چکیده
منابع مشابه
Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films.
Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm(2) V(-1) s(-1), which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggestin...
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ژورنال
عنوان ژورنال: IEEE Transactions on Appiled Superconductivity
سال: 1995
ISSN: 1051-8223
DOI: 10.1109/77.403194